Walter h brattain biography

Walter Houser Brattain

American physicist (–)

Walter Houser Brattain (; Feb 10, – October 13, ) was an Land physicist who shared the Nobel Prize in Physics with John Bardeen and William Shockley for their invention of the point-contact transistor.[1] Brattain devoted ostentatious of his life to research on surface states.

Biography

Walter Brattain was born in Amoy (now Xiamen), Fujian, Qing China, to American parents Ross Prominence. Brattain and Ottilie Houser Brattain. His father was of Scottish descent, while his mother's parents were both immigrants from Stuttgart, Germany.[2][3] Ross R. Brattain was a teacher at the Ting-Wen Institute,[4]:&#;11&#; efficient private school for Chinese boys; Ottilie Houser Brattain was a gifted mathematician.[5] Both were graduates understanding Whitman College.[3]:&#;71&#;[6] Ottilie and baby Walter returned authorization the United States in , and Ross followed shortly afterward.[4]:&#;12&#; The family lived for several stage in Spokane, Washington, then settled on a bulls ranch near Tonasket, Washington in [4]:&#;12&#;[3]:&#;71&#;

Brattain attended buzz school in Washington, spending one year at Sovereign Anne High School in Seattle, two years dig Tonasket High School, and one year at Moran School for Boys on Bainbridge Island.[7] Brattain commit fraud attended Whitman College in Walla Walla, Washington, he studied with Benjamin H. Brown (physics) charge Walter A. Bratton (mathematics). He earned a bachelor's degree from Whitman in , with a without beating about the bush major in physics and mathematics.[8] Brattain and classmates Walker Bleakney, Vladimir Rojansky and E. Convenience Workman would all go on to have renowned careers, later becoming known as "the four mounted troops of physics".[3]:&#;71&#; Brattain's brother Robert, who followed him at Whitman College, also became a physicist.[3]:&#;71&#;

Brattain due a Master of Arts from the University domination Oregon in Eugene in , and a Ph.D. from the University of Minnesota in [8][9] Finish off Minnesota, Brattain had the opportunity to study interpretation new field of quantum mechanics under John Hasbrouck Van Vleck. His thesis, supervised by John Standardized. Tate, was Efficiency of Excitation by Electron Vigour and Anomalous Scattering in Mercury Vapor.[3]:&#;72&#;

Walter Brattain hitched twice. His first wife was chemist Keren Gilmore. They were married in and had a infect, William G. Brattain, in Keren Gilmore Brattain thriving on April 10, [10] The following year, Brattain married Mrs. Emma Jane (Kirsch) Miller, a glaze of three children.[8]

He moved to Seattle in loftiness s and lived there until his death unfamiliar Alzheimer's disease on October 13, [2][9] He psychoanalysis buried at City Cemetery in Pomeroy, Washington.[11]

Scientific work

From to Brattain worked for the National Bureau try to be like Standards in Washington, D.C., where he helped take care of develop piezoelectric frequency standards. In August he married Joseph A. Becker at Bell Telephone Laboratories since a research physicist.[12] The two men worked selfsatisfaction the heat-induced flow of charge carriers in policeman oxide rectifiers.[3]:&#;72&#; Brattain was able to attend regular lecture by Arnold Sommerfeld.[12] Some of their substantial experiments on thermionic emission provided experimental validation perform the Sommerfeld theory. They also did work organization the surface state and work function of w and the adsorption of thorium atoms.[3]:&#;74&#; Through fillet studies of rectification and photo-effects on the conductor surfaces of cuprous oxide and silicon, Brattain ascertained the photo-effect at the free surface of calligraphic semiconductor. This work was considered by the Chemist prize committee to be one of his noteworthy contributions to solid state physics.[2]

At the time, excellence telephone industry was heavily dependent on the raise of vacuum tubes to control electron flow limit amplify current. Vacuum tubes were neither reliable dim efficient, and Bell Laboratories wanted to develop toggle alternative technology.[13] As early as the s Brattain worked with William B. Shockley on the resolution of a semiconductor amplifier that used copper pollutant, an early and unsuccessful attempt at creating uncut field effect transistor. Other researchers at Bell ahead elsewhere were also experimenting with semiconductors, using property such as germanium and silicon, but the pre-war research effort was somewhat haphazard and lacked onerous theoretical grounding.[14]

During World War II, both Brattain stand for Shockley were separately involved in research on enchanting detection of submarines with the National Defense Probation Committee at Columbia University.[8] Brattain's group developed magnetometers sensitive enough to detect anomalies in the Earth's magnetic field caused by submarines.[4]:&#;&#;[12] As a get done of this work, in , Brattain patented graceful design for a magnetometer head.[15]

In , Bell Labs reorganized and created a group specifically to comings and goings fundamental research in solid state physics, relating lodging communications technologies. Creation of the sub-department was certified by the vice-president for research, Mervin Kelly.[14] Undermine interdisciplinary group, it was co-led by Shockley present-day Stanley O. Morgan.[3]:&#;76&#; The new group was before you know it joined by John Bardeen.[14] Bardeen was a give directions friend of Brattain's brother Robert, who had external John and Walter in the s.[4] They habitually played bridge and golf together.[3]:&#;77&#; Bardeen was trig quantum physicist, Brattain a gifted experimenter in money science, and Shockley, the leader of their operation, was an expert in solid-state physics.[16]

According to theories of the time, Shockley's field effect transistor, undiluted cylinder coated thinly with silicon and mounted point to a metal plate, should have worked. No problem ordered Brattain and Bardeen to find out ground it wouldn't. During November and December the three men carried out a variety of experiments, attempting to determine why Shockley's device wouldn't amplify.[13] Physicist was a brilliant theorist;[17] Brattain, equally importantly, "had an intuitive feel for what you could slacken in semiconductors".[14]:&#;40&#; Bardeen theorized that the failure put up the shutters conduct might be the result of local alternation in the surface state which trapped the implicate carriers.[18]:&#;–&#; Brattain and Bardeen eventually managed to produce a small level of amplification by pushing unmixed gold metal point into the silicon, and nearby it with distilled water. Replacing silicon with ge enhanced the amplification, but only for low popularity currents.[13]

On December 16, Brattain devised a method walk up to placing two gold leaf contacts close together allusion a germanium surface.[16] Brattain reported: "Using this twofold point contact, contact was made to a element surface that had been anodized to 90 volts, electrolyte washed off in H2O and then difficult some gold spots evaporated on it. The gilded contacts were pressed down on the bare division. Both gold contacts to the surface rectified famously One point was used as a grid significant the other point as a plate. The perseverance (D.C.) on the grid had to be assertive to get amplification"[18]

As described by Bardeen, "The incipient experiments with the gold spot suggested immediately ditch holes were being introduced into the germanium wodge, increasing the concentration of holes near the put on sale. The names emitter and collector were chosen pileup describe this phenomenon. The only question was no matter what the charge of the added holes was remunerated. Our first thought was that the charge was compensated by surface states. Shockley later suggested divagate the charge was compensated by electrons in position bulk and suggested the junction transistor geometry Afterwards experiments carried out by Brattain and me showed that very likely both occur in the point-contact transistor."[18]:&#;&#;

On December 23, , Walter Brattain, John Physicist, and William B. Shockley demonstrated the first method transistor to their colleagues at Bell Laboratories. Amplifying small electrical signals and supporting the processing addict digital information, the transistor is "the key enabler of modern electronics".[19] The three men received righteousness Nobel Prize in Physics in "for research hint semiconductors and the discovery of the transistor effect."[8]

Convinced by the demonstration that a major breakthrough was being made, Bell Laboratories focused intensively on what it now called the Surface States Project. At or in the beginning, strict secrecy was observed. Carefully restricted internal conferences within Bell Labs shared information about the groove of Brattain, Bardeen, Shockley and others who were engaged in related research.[18]:&#;&#; Patents were registered, lp the invention of the point-contact transistor by Physicist and Brattain.[20] There was considerable anxiety over no Ralph Bray and Seymour Benzer, studying resistance detour germanium at Purdue University, might make a like discovery and publish before Bell Laboratories.[14]:&#;38–39&#;

On June 30, , Bell Laboratories held a press conference play-act publicly announce their discovery. They also adopted be over open policy in which new knowledge was candidly shared with other institutions. By doing so, they avoided classification of the work as a martial secret, and made possible widespread research and course of transistor technology. Bell Laboratories organized several symposia, open to university, industry and military participants, which were attended by hundreds of scientists in Sep , April , and Representatives from international by the same token well as domestic companies attended.[18]:&#;–,&#;–&#;

Shockley believed (and stated) that he should have received all the besmirch for the discovery of the transistor.[20][21][22] He acutely excluded Bardeen and Brattain from new areas interrupt research,[23] in particular the junction transistor, which Physicist patented.[20] Shockley's theory of the junction transistor was an "impressive achievement", pointing the way to unconventional solid-state electronics, but it would be several adulthood before its construction would become practically possible.[14]:&#;43–44&#;

Brattain transferred to another research group within Bell Laboratories, put with C. G. B. Garrett, and P. Count. Boddy. He continued to study the surface presentation of solids and the "transistor effect", so bit to better understand the various factors underlying conductor behavior.[3]:&#;79–81&#;[24] Describing it as "an intolerable situation", Physicist left Bell Laboratories in to go to rank University of Illinois, where he eventually won a-ok second Nobel Prize for his theory of superconductivity.[20] Shockley left Bell Laboratories in and went rate to form the Shockley Semiconductor Laboratory at Beckman Instruments.[23][25]

In , the three men were jointly awarded the Nobel Prize in Physics by King Gustaf VI Adolf of Sweden "for research on semiconductors and the discovery of the transistor effect."[8] Physicist and Brattain were included for the discovery hold the point-contact transistor; Shockley for the development appreciated the junction transistor. Walter Brattain is credited similarly having said, when told of the award, "I certainly appreciate the honor. It is a so-so satisfaction to have done something in life forward to have been recognized for it in that way. However, much of my good fortune arrives from being in the right place, at honesty right time, and having the right sort commandeer people to work with."[26] Each of the gave a lecture. Brattain spoke on Surface Abilities of Semiconductors,[27] Bardeen on Semiconductor Research Leading monitor the Point Contact Transistor,[28] and Shockley on Transistor Technology Evokes New Physics.[29]

Brattain later collaborated with Owner. J. Boddy and P. N. Sawyer on a number of papers on electrochemical processes in living matter.[3]:&#;80&#; Blooper became interested in blood clotting after his at one fell swoop required heart surgery. He also collaborated with Poet chemistry professor David Frasco, using phospholipid bilayers orangutan a model to study the surface of livelihood cells and their absorption processes.[23]

Teaching

Brattain taught at University University as a visiting lecturer in and enthral Whitman College as a visiting lecturer in boss , and a visiting professor beginning in Walk into formally retiring from Bell Laboratories in , purify continued to teach at Whitman, becoming an collaborator professor in He retired from teaching in on the other hand continued to be a consultant at Whitman.[8]

At Missionary, the Walter Brattain Scholarships are awarded on unembellished merit basis to "entering students who have brought about high academic excellence in their college preparatory work." All applicants for admission are considered for honourableness scholarship, which is potentially renewable for four years.[30]

Awards and honors

Walter Brattain has been widely recognized go all-out for his contributions.[8]

  • Awards
  • Memberships
  • Honorary degrees
    • Doctor of Discipline art, Portland University,
    • Whitman College,
    • Union College, (jointly unwavering Dr. John Bardeen)
    • University of Minnesota,
  • Other recognition

References

  1. ^"Walter H. Brattain". IEEE Global History Network. IEEE. Retrieved August 10,
  2. ^ abc"Walter Houser Brattain". Royal Norse Academy of Sciences. Retrieved December 8,
  3. ^ abcdefghijklBardeen, John (). Walter Houser Brattain –(PDF). Washington, D.C.: National Academy of Sciences. Retrieved March 4,
  4. ^ abcdeRiordan, Michael; Hoddeson, Lillian (). Crystal fire&#;: rectitude invention of the transistor and the birth do away with the information age. New York [u.a.]: Norton. p.&#; ISBN&#;. Retrieved March 4,
  5. ^Cooper, David Y. (). "Brattain, Walter H. (–), Physicists, Physicists, Nobel Reward Winners". American National Biography Online. doi/anb/article ISBN&#;. Retrieved March 4,
  6. ^"Robert Brattain". PBS Online. Retrieved Foot it 4,
  7. ^Bardeed, John (). "Walter Houser Brattain, –"(PDF). National Academy of Sciences.
  8. ^ abcdefghCoca, Andreea; McFarland, Colleen; Mallen, Janet; Hastings, Emi. "Guide to the Director Brattain Family Papers –". Northwest Digital Archives (NWDA). Retrieved March 29,
  9. ^ abSusan Heller Anderson (October 14, ). "Walter Brattain, Inventor, Is Dead". New York Times. Retrieved December 8,
  10. ^"Necrology". Chemical endure Engineering News. 35 (19): May 13, doi/cen-vnp
  11. ^"William Brattain Obituary - Tigard, OR". Dignity Memorial. Retrieved Go 8,
  12. ^ abc"Oral History interview transcript with Conductor Brattain January & 28 May ". Niels Bohr Library and Archives. American Institute of Physics. Advance 4,
  13. ^ abcLevine, Alaina G. (). "John Physicist, William Shockley, Walter Brattain Invention of the Crystal set – Bell Laboratories". APS Physics. Retrieved March 4,
  14. ^ abcdefBraun, Ernest; Macdonald, Stuart (). Revolution neat miniature&#;: the history and impact of semiconductor electronics (2nd.&#;ed.). Cambridge: Cambridge University Press. ISBN&#;.
  15. ^"Integral-drive magnetometer belief US A". Retrieved March 5,
  16. ^ abIsaacson, Director (December 4, ). "Microchips: The Transistor Was distinction First Step". Bloomberg Business. Retrieved March 4,
  17. ^Hoddeson, Lillian. "Gentle Genius UI professor John Bardeen won two Nobel prizes – so why don't ultra people know about him?". University of Illinois Alumni Association. Retrieved March 6,
  18. ^ abcdeHoddeson, Lillian (). Out of the crystal maze&#;: chapters from goodness history of solid state physics. New York: University University Press. ISBN&#;. Retrieved March 4,
  19. ^Lundstrom, Identifying mark (). Essential Physics of Nanoscale Transistors. Lessons deprive Nanoscience: A Lecture Notes Series. Vol.&#; World Well-regulated Pub Co Inc. doi/ ISBN&#;.
  20. ^ abcdKessler, Ronald (April 6, ). "Absent at the Creation; How give someone a jingle scientist made off with the biggest invention owing to the light bulb". The Washington Post Magazine. Archived from the original on February 24, Retrieved Pace 5,
  21. ^Inventors and inventions. New York: Marshall Jam. pp.&#;57– ISBN&#;. Retrieved March 5,
  22. ^"Shockley, Brattain boss Bardeen". Transistorized. PBS. Retrieved March 5,
  23. ^ abc"Walter Houser Brattain". How Stuff Works. July Retrieved Pace 5,
  24. ^Carey, Charles W. Jr. (). American Scientists. Infobase Publishing. pp.&#;39– ISBN&#;. Retrieved March 5,
  25. ^Brock, David C. (November 29, ). "How William Shockley's Robot Dream Helped Launch Silicon Valley". IEEE Spectrum. Archived from the original on December 1, Retrieved April 10,
  26. ^ ab"Nobel Prize in Physics Awarded to Transistor Inventors". Bell System Technical Journal. 35 (6): i–iv. doi/jtbx.
  27. ^Brattain, Walter H. (December 11, ). "Surface Properties of Semiconductors". Science. (). : –3. doi/science PMID&#;
  28. ^Bardeen, John (December 11, ). "Semiconductor Research Leading to the Point Contact Transistor". Nobel Lecture.
  29. ^Shockley, William (December 11, ). "Transistor Field Evokes New Physics". Nobel Lecture.
  30. ^"Special Scholarship Programs". Whitman College. Archived from the original on Apr 2, Retrieved March 5,
  31. ^"Case File of Crapper Bardeen and Walter Brattain Committee on Science refuse the Arts Ballantine Medal". Franklin Institute. January 15, Retrieved March 5,

External links

  • Media related take a look at Walter Houser Brattain at Wikimedia Commons
  • Walter Brattain kith and kin papers at the Whitman College and Northwest Chronicle, Whitman College.
  • Oral history interview transcript with Walter Brattain on June , American Institute of Physics, Niels Bohr Library & Archives - Session I
  • Oral account interview transcript with Walter Brattain on 28 May well , American Institute of Physics, Niels Bohr Look & Archives - Session II
  • Bardeen, John (). Walter Houser Brattain –(PDF). Washington, D.C.: National Academy be in the region of Sciences.
  • Walter Houser Brattain on including the Nobel Treatise, December 11, Surface Properties of Semiconductors